Exposure method and exposure apparatus using near-field light and exposure mask

摘要

A photolithography method using near-field light includes a step of controlling the position of an exposure mask and an object to be processed so as to make the object to be located in a region where near-field light is present, and a step of exposing the object to near-field light while controlling the intensity of such light as a function of the aperture density of the exposure mask. The intensity of near-field light is controlled by modifying the aperture width or modifying the transmissivity of the exposure mask depending on the aperture density.