| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
The invention relates to a semiconductor device having improved wiring layers. The wiring is formed on the semiconductor substrate and has a first region and a second region. The first region comprises a conductive film and an insulating film formed by oxidizing a film connected to the conductive film and made of the same material thereof. The second region includes a wiring and is provided on the first region. The Gibbs free energy of the wiring decreases less than that of the conductive film when the wiring and the conductive film are oxidized.
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| 申请公布号 |
US6720657(B2) |
申请公布日期 |
2004.04.13 |
| 申请号 |
US20010817271 |
申请日期 |
2001.03.27 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUGURO KYOICHI |
| 分类号 |
H01L21/302;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L23/40 |
主分类号 |
H01L21/302 |
| 代理机构 |
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