发明名称 Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography
摘要 The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.
申请公布号 US6720565(B2) 申请公布日期 2004.04.13
申请号 US20010057324 申请日期 2001.10.26
申请人 APPLIED MATERIALS, INC. 发明人 INNES ROBERT;BABIN SERGEY;TEITZEL ROBIN;VENEKLASEN LEE
分类号 G03F7/20;G03F1/00;G03F1/08;G03F1/78;H01J37/04;H01J37/304;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):G21K5/10;H01J37/08 主分类号 G03F7/20
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