发明名称 |
Real-time prediction of and correction of proximity resist heating in raster scan particle beam lithography |
摘要 |
The present invention relates to methods of predicting proximity heating of resists in electron beam lithography in real-time as the writing proceeds enabling beam compensation in current and/or dwell time to be performed during writing. A method of using a precomputed kernel capable of proximity resist temperature evaluation in real-time as beam writing proceeds by scalar product of the kernel with a graded cell size coverage map. A shifted impulse response function is shown to give the kernel values accurate to within a few percent.
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申请公布号 |
US6720565(B2) |
申请公布日期 |
2004.04.13 |
申请号 |
US20010057324 |
申请日期 |
2001.10.26 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
INNES ROBERT;BABIN SERGEY;TEITZEL ROBIN;VENEKLASEN LEE |
分类号 |
G03F7/20;G03F1/00;G03F1/08;G03F1/78;H01J37/04;H01J37/304;H01J37/305;H01J37/317;H01L21/027;(IPC1-7):G21K5/10;H01J37/08 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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