Method and circuit arrangement for reading out and for storing binary memory cell signals

摘要

The invention provides a method in which a binary memory cell signal from a; least one memory cell is applied to at least one bit line pair (201t, 201b), the binary memory cell signal from the memory tell is switched through via the bit line pair (201t, 201b) to at least one sense amplifier (202), a binary output signal of the sense amplifier (202) is switched through to a local data line pair (205) as a binary intermediate signal, the binary intermediate signal on the local data line pair (205) is switched through to at least one main data line pair (208) by means of a main data line switching transistor pair (209) in a manner dependent on a row control signal fed via a row control line (210), the main data line switching transistor pair (209) being arranged in the through-plating regions formed between the memory cell arrays.