DATA SENSE CIRCUIT OF MAGNETIC RANDOM ACCESS MEMORY AND METHOD FOR THE SAME

摘要

PURPOSE: A data sense circuit of a magnetic random access memory and a method for the same are provided to drastically reduce the area of circuit without utilizing a reference cell. CONSTITUTION: A data sense circuit of a magnetic random access memory includes a current source(181), a first storage device, a second storage device and a differential amplifier(185). The current source(181) supplies one selected from a first current and a second current to the magnetic memory cell(MC) in response to the control signal. The first storage device stores a first voltage corresponding to the resistance value of the magnetic memory cell(MC) in response to the first switching signal. The second storage device stores the second voltage corresponding to the resistance value of the magnetic memory cell(MC) in response to the second switching signal. And, the differential amplifier(185) determines the data stored the magnetic memory cell(MC) by using the difference between the first voltage stored at the first storage device and the second voltage stored at the second storage device.