| 发明名称 |
Method for memory sensing |
| 摘要 |
Methods are disclosed for reading data from memory cells such as a ferroelectric memory cell in a memory device, where one sense amp bitline is coupled with a precharge voltage while another sense amp bitline is coupled with the memory cell.
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| 申请公布号 |
US6721217(B2) |
申请公布日期 |
2004.04.13 |
| 申请号 |
US20020185206 |
申请日期 |
2002.06.27 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
MADAN SUDHIR K.;MCADAMS HUGH |
| 分类号 |
G11C7/06;G11C11/22;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/06 |
| 代理机构 |
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