发明名称 |
Designs of reference cells for magnetic tunnel junction (MTJ) MRAM |
摘要 |
A reference cell circuit for a magnetic tunnel junction MRAM includes a first magnetic tunnel junction device set to a low resistance state and a second magnetic tunnel junction device set to a high resistance state. A reference cell series unit includes the first magnetic tunnel junction device electrically coupled in series with the second magnetic tunnel junction device. The reference cell series unit further has a first end and a second end with the first end being electrically coupled to a first current source and the second end being electrically coupled to a current sink and a second current source.
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申请公布号 |
US6721203(B1) |
申请公布日期 |
2004.04.13 |
申请号 |
US20010017647 |
申请日期 |
2001.12.12 |
申请人 |
WESTERN DIGITAL (FREMONT), INC. |
发明人 |
QI QIUQUN;SHI XIZENG;GIBBONS MATTHEW R. |
分类号 |
G11C11/16;(IPC1-7):G11C11/15 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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