| 摘要 |
PURPOSE: A laser annealing device and a silicon crystallizing method using the same are provided to prevent the increase and defects of grain by spraying heated N2 when crystallizing silicon by using laser beams and simultaneously prevent the air pollution. CONSTITUTION: A laser annealing device includes a laser beam generator(31), a homogenizer(36) for making the energy density of laser beams, and an X-Y stage(40) positioned corresponding to the laser beam generator and moving by a predetermined distance in X or Y axis. A mask(37) is positioned between the X-Y stage and the laser beam generator and has a plurality of slits to pass the laser beams. A mask moving stage(41) is connected to a side of the mask for moving the mask by a predetermined distance. An N2 gas supplier(42) supplies heated N2 gas to a substrate radiated by the laser beams. The N2 gas supplier has a purifier for purifying the N2 gas supplied via an N2 supply line, and a heater for heating the purified N2 gas. |
