发明名称 Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
摘要 A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.
申请公布号 US6720259(B2) 申请公布日期 2004.04.13
申请号 US20020262992 申请日期 2002.10.02
申请人 GENUS, INC. 发明人 LONDERGAN ANA R.;RAMANATHAN SASANGAN;WINKLER JERELD;SEIDEL THOMAS E.
分类号 C23C16/34;C23C16/40;C23C16/44;H01L21/314;H01L21/316;(IPC1-7):H01L21/31 主分类号 C23C16/34
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