发明名称 |
Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition |
摘要 |
A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.
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申请公布号 |
US6720259(B2) |
申请公布日期 |
2004.04.13 |
申请号 |
US20020262992 |
申请日期 |
2002.10.02 |
申请人 |
GENUS, INC. |
发明人 |
LONDERGAN ANA R.;RAMANATHAN SASANGAN;WINKLER JERELD;SEIDEL THOMAS E. |
分类号 |
C23C16/34;C23C16/40;C23C16/44;H01L21/314;H01L21/316;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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