发明名称 Semiconductor device and method of manufacturing the same
摘要 In a semiconductor device, an insulating substrate has a plurality of through holes. A plurality of conductive posts are buried in the through-holes. The conductive posts are classified to at least one first conductive post and a pair of second conductive posts. A semiconductor element has at least one surface electrode at a surface side. The surface electrode is connected to the first conductive post by a face-down method. A metal block is formed to a square-arch shape in a cross sectional view and has a ceiling portion and both end portions. A back surface of the semiconductor element is secured to the ceiling portion while the both end portions are secured to the second conductive posts. A sealing-resin seals the semiconductor element.
申请公布号 US6720647(B2) 申请公布日期 2004.04.13
申请号 US20010871943 申请日期 2001.06.04
申请人 NEC ELECTRONICS CORPORATION 发明人 FUKUIZUMI AKIRA
分类号 H01L23/28;H01L21/60;H01L23/12;H01L23/29;H01L23/367;(IPC1-7):H01L23/12 主分类号 H01L23/28
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