发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
In a semiconductor device, an insulating substrate has a plurality of through holes. A plurality of conductive posts are buried in the through-holes. The conductive posts are classified to at least one first conductive post and a pair of second conductive posts. A semiconductor element has at least one surface electrode at a surface side. The surface electrode is connected to the first conductive post by a face-down method. A metal block is formed to a square-arch shape in a cross sectional view and has a ceiling portion and both end portions. A back surface of the semiconductor element is secured to the ceiling portion while the both end portions are secured to the second conductive posts. A sealing-resin seals the semiconductor element.
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申请公布号 |
US6720647(B2) |
申请公布日期 |
2004.04.13 |
申请号 |
US20010871943 |
申请日期 |
2001.06.04 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
FUKUIZUMI AKIRA |
分类号 |
H01L23/28;H01L21/60;H01L23/12;H01L23/29;H01L23/367;(IPC1-7):H01L23/12 |
主分类号 |
H01L23/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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