| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride compound semiconductor light-emitting element, in which the area of a light-transmitting electrode is reduced and luminous power conversion efficiency can be improved by enhancing the spreading of a current in a p-type layer. SOLUTION: In a light-emitting element having an n-type gallium nitride compound semiconductor layer 3, consisting of a gallium nitride compound semiconductor thin-film, a light-emitting layer 4 and a p-type layer 20 on a substrate 1, the p-type layer 20 is formed into a constitution containing at least a first layer 7 having high resistivity and a second layer 6 having resistivity lower than that of the first layer 7, a flow in the layer direction of a current is promoted by having the layer with low resistivity in the p-type layer 20 contained, and the diffusion of the current is improved. |
