| 摘要 |
The method comprises the steps of (i) introducing the gaseous species into the substrate (1) under conditions which allow the formation of a fragile layer by the presence of micro-cavities and/or micro-bubbles in the same layer so that a thin layer of semiconductor material is demarcated between the fragile layer and one face (2) of the substrate, (ii) performing a heat treatment of the substrate for increasing the level of fragility or brittleness of the fragile layer until the appearance of local deformations of that face (2) in the form of blisters but without generating the exfoliations of the thin layer in the course of this step or in subsequent processing, and (iii) carrying out the epitaxial growth of semiconductor material on that face (2) of the substrate in order to form at least one epitaxial layer (6) on the thin layer. The introduction of the gaseous species is by ionic implantation or an implantation by plasma immersion, in particular to both faces of the substrate. Before the heat treatment, a step is introduced of forming a thickener whose thickness is sufficiently large not to generate the exfoliations in the thin layer and at the same time sufficiently small in order to avoid a separation of the substrate at the level of the fragile layer at the time of the heat treatment. The thickener is eliminated, totally or partially, before the step of epitaxial growth. A supplementary step is introduced of implementing components in the epitaxial layer, in particular of photovoltaic components. A supplementary step is introduced of forming a protection layer on the epitaxial layer, where the protection layer is designed to protect the epitaxial layer from chemical action designed to separate the substrate at the level of the fragile layer. A semiconductor element is obtained by taking a detachable semiconductor substrate and by carrying out the detachment at the level of the fragile layer so that the separation is either total for obtaining the semiconductor element in the form of a membrane, or partial for obtaining one or more semiconductor elements forming one or more components. A supplementary step is introduced of fastening the epitaxial layer to a support before the detachment, where the detachment is by the application of constraints on traction and/or shear. The detachment is by implementing a step of introducing a supplementary gaseous species, then a step of mechanical constraint and/or a heat treatment of the fragile layer. The detachment is by a chemical action on the fragile layer, or an acoustic wave treatment of the fragile layer. The detachment is by a chemical action on the fragile layer, or an acoustic wave treatment of the fragile layer. The detachable semiconductor substrate is that which has already been detached without preliminary surface conditioning. The method can be repeated so to use up the remaining substrate.
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