发明名称 |
LITHOGRAPHY PROJECTION DEVICE AND MEASURING SYSTEM TO ALLOW RADIATION TO CHARGE ENTIRE PUPIL OF PROJECTION LENS AND TO MINIMIZE EFFECT OF WAVE FRONT ABERRATIONS |
摘要 |
PURPOSE: A lithography projection device and a measuring system are provided, to allow radiation to charge the entire pupil of a projection lens and to minimize the effect of wave front aberrations. CONSTITUTION: The lithography projection device comprises a radiation system which supplies a projected beam of radiation; a support structure which supports a patterning means patterning the projected beam according to a certain pattern; a substrate table which holds a substrate; a projection system which projects the beam patterned on the target area of a substrate; and a measuring system, wherein the measuring system comprises a structure increasing the pupil charge of radiation and a diffraction unit which can move into the projected beam between the radiation system and the projection system; and a sensor module which senses the radiation crosses the projection system measuring the wave front aberrations of a projection system.
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申请公布号 |
KR20040030322(A) |
申请公布日期 |
2004.04.09 |
申请号 |
KR20030067498 |
申请日期 |
2003.09.29 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
VAN DER LAAN HANS;BASELMANS JOHANNES JACOBUS MATHEUS;VAN DIJSSELDONK ANTONIUS JOHANNES JOSEPHUS;LEENDERS MARTINUS HENDRIKUS ANTONIUS;MOORS JOHANNES HUBERTUS JOSEPHINA |
分类号 |
G01M11/02;G03F7/20;H01L21/027;(IPC1-7):G03F7/20 |
主分类号 |
G01M11/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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