发明名称 METHOD FOR POLISHING ORGANIC LAYER SUCH AS RESIST OR THE LIKE ON SEMICONDUCTOR SUBSTRATE BY USING RESIN PARTICLES AND SLURRY FOR USE IN POLISHING
摘要 PURPOSE: A method for polishing an organic layer such as a resist or the like on a semiconductor substrate by using resin particles and slurry for use in polishing is provided to polish uniformly a resist layer by performing a chemically and mechanically polishing method using the slurry including the resin particles. CONSTITUTION: A method for polishing an organic layer includes a process for polishing a semiconductor substrate(11) having an exposed organic layer by using slurry containing resin particles. In the method for polishing the organic layer, the organic layer is formed with a resist layer(13,141-146,151-156). The polishing method further includes a process for chemically and mechanically polishing the organic layer by using the slurry containing the resin particles.
申请公布号 KR20040030350(A) 申请公布日期 2004.04.09
申请号 KR20030068158 申请日期 2003.10.01
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKAYASU JUN;MURAKAMI SATOSHI
分类号 B24B37/00;C09G1/02;H01L21/304;H01L21/3105;H01L21/312;H01L21/334;(IPC1-7):H01L21/304 主分类号 B24B37/00
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