LOW DIELECTRIC MATERIAL AND PREPARATION METHOD THEREOF SHOWING LOW DIELECTRIC CONSTANT, INCREASED ELASTIC MODULUS WHEN USED AS INTERLEVEL DIELECTRICS IN INTEGRATED CIRCUITS

摘要

PURPOSE: A low dielectric material is provided to lower dielectric constant expressed through a higher normalized wall elastic modulus, and to increase elastic modulus and mechanical strength when used as interlevel dielectrics in electronic elements such as integrated circuits(IC), thereby improving the performance of the electronic device. CONSTITUTION: The low dielectric material has a dielectric constant of about 3.7 or less; a normalized wall elastic modulus(Eo'), which is derived in part from the dielectric constant of the material, of about 15 GPa or more; and a metal impurity level of about 500 ppm or less. The method for preparing said low dielectric material comprises: providing a mixture comprising the product from the hydrolysis and condensation of at least one silica source and at least one porogen, wherein the mixture has a metal impurity content of about 500 ppm or less; dispensing the mixture onto a substrate to form a coated substrate; and curing the coated substrate by using one or more temperatures and for a time sufficient to form a dielectric film.