发明名称 INDANE COMPOUNDS WITH NEGATIVE DIELECTRIC ANISOTROPY
摘要 The invention relates to indanes having negative Deltaepsilon of the formula Ia or Ib in which R, A, Z, X, Y, V, W, n and m are as defined in claim 1. The compounds are particularly suitable for producing VA-TFT displays.
申请公布号 KR20040030824(A) 申请公布日期 2004.04.09
申请号 KR20047000880 申请日期 2002.07.19
申请人 发明人
分类号 C07C25/22;G02F1/13;C07C17/093;C07C17/18;C07C17/25;C07C17/35;C07C17/354;C07C43/225;C07C45/51;C07C49/697;C07C49/755;C07D307/79;C09K19/32;C09K19/34;C09K19/42 主分类号 C07C25/22
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