发明名称 |
Method of reducing wafer etching defect |
摘要 |
The present invention relates to a method of reducing needle-like defects generated on a wafer rim in an etching process, wherein the etching process using both a photoresist material and hardmask material as a mask. After removing the photoresist material and the hardmask material, said method comprising the steps of: (i) depositing the photoresist material on the wafer again; (ii) performing wafer edge exposure (WEE) to form a ring of the wafer edge; and (iii) performing dry etching to the exposed ring of wafer edge to remove the needle-like defects generated on the wafer edge.
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申请公布号 |
US2004067654(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
US20020265826 |
申请日期 |
2002.10.07 |
申请人 |
PROMOS TECHNOLOGIES, INC. |
发明人 |
CHEN CHUN-WEI;CHANG HONG-LONG;TSAI NIEN-YU |
分类号 |
H01L21/3065;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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地址 |
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