Insulated gate bipolar transistor to be controlled as a semiconductor component by field effect has an integrated recovery element and a recovery diode function

摘要

A semiconductor element has a first connection zone (FCZ) (60) for a first mode of conductivity (MOC) with a drift zone (DZ) (40). A semiconductor zone (50) for a second MOC fits between the FCZ and the DZ. A connection electrode (90) makes contact with a second connection zone (SCZ) (20) for a second MOC. The DZ fits between the SCZ and a channel zone insulated against a control electrode (70).