| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent unnecessary growth of a crystal on the rear surface of a substrate and to provide a liquid phase growth method by which the productivity is enhanced in a liquid phase growth method comprising forming a semiconductor crystal thin film on the substrate from a solution obtained by dissolving a crystal material into a solvent such as metal. <P>SOLUTION: In the liquid phase growth method, it is possible to grow the crystal only on the desired substrate side by floating a plurality of substrates on the surface of a flowing solution, and growing the crystal on the substrate surface brought into contact with the solution while moving the plurality of substrates by the flowing solution. Further, the movement of the substrates can be realized only by the flow of a melt without using a specific tool or a conveying mechanism, and the productivity can be enhanced by continuously growing the crystal on the plurality of substrates. <P>COPYRIGHT: (C)2004,JPO |
