| 摘要 |
PROBLEM TO BE SOLVED: To provide a bipolar transistor having a base semiconductor layer structure which can minimize base parasitic resistance, and its manufacturing method. SOLUTION: A second-conductivity-type collector region 16 delimited by element isolation regions 20 is formed on a first-conductivity-type semiconductor substrate 10, and a first-conductivity-type first base semiconductor layer 40 extends from the top face of the collector region 16 to the top faces of the element isolation regions 20. The first base semiconductor layer 40 is made of SiGe. A first-conductivity-type second base semiconductor layer 60 is formed on the top face of the first base semiconductor layer 40 excluding an emitter region and a region in which an emitter insulating film is formed, and a base ohm layer 70 is formed on the second base semiconductor layer 60. This structure can minimize parasitic resistance and junction capacitance and can reduce resistance to current between an base electrode and an emitter electrode, thus achieving higher operating speeds and lower noises of elements. COPYRIGHT: (C)2004,JPO
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