| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic storage device which can reduce writing current. SOLUTION: The magnetic storage device includes first wiring WWL1, WWL2 extended in a first direction and divided into a plurality in a second direction different from the first direction, second wiring BL extended in the second direction, and a first magnetoresistive effect element 11 disposed near an intersection of the first and second wiring WWL1, WWL2 and BL in a first memory cell area to cross over the divided first wiring WWL1, WWL2. COPYRIGHT: (C)2004,JPO
|
