发明名称 |
Heterojunction bipolar transistor having wide bandgap material in collector |
摘要 |
The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.
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申请公布号 |
US2004065898(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
US20020267342 |
申请日期 |
2002.10.08 |
申请人 |
EIC CORPORATION |
发明人 |
CHAU HIN FAI;DUNNROWICZ CLARENCE JOHN;CHEN YAN;LEE CHIEN PING |
分类号 |
H01L29/08;H01L29/737;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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