TFT CAPACITOR AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A TFT capacitor and a fabricating method thereof are provided to increase the capacitance of the TFT capacitor and widen an AC frequency band by forming a TiO2 layer having a large dielectric constant as a dielectric layer of a capacitor. CONSTITUTION: A TFT capacitor is formed on a semiconductor substrate structure(101) including a first electrode layer(104) and an exposed bottom insulating layer. The TFT capacitor includes an interlayer dielectric, a TiO2 dielectric layer(109), and a second electrode layer(111). The interlayer dielectric is formed on the exposed bottom insulating layer. The interlayer dielectric includes a capacitor hole for exposing the first electrode layer(104). The TiO2 dielectric layer(109) is formed on an inner wall of the capacitor hole. The second electrode layer(111) is formed on the TiO2 dielectric layer(109) in order to bury the inside of the capacitor hole.