发明名称 |
FERROELECTRIC TRANSISTOR FOR STORING TWO DATA BITS |
摘要 |
A method of storing and accessing two data bits in a single ferroelectric FET includes selectively polarizing two distinct ferroelectric regions in the same gate dielectric layer separated by a non-ferroelectric dielectric region. A first ferroelectric region is sandwiched between the substrate and the gate terminal in the region of the source and is polarized in one of two states to form a first data bit within the FET. A second ferroelectric region is sandwiched between the substrate and the gate terminal in the region of the drain and is polarized in one of two states to form a second data bit within the FET. Detection of the first data bit is accomplished by selectively applying a read bias to the FET terminals, a first current resulting when a first state is stored and a second current resulting when a second state is stored. The polarization of the second data bit is accomplished by reversing the source and drain voltages. |
申请公布号 |
AU2003273228(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
AU20030273228 |
申请日期 |
2003.08.04 |
申请人 |
COVA TECHNOLOGIES, INC. |
发明人 |
ALFRED, P. GNADINGER;KLAUS DIMMLER |
分类号 |
G11C11/22;G11C11/56;H01L27/115;H01L29/78 |
主分类号 |
G11C11/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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