| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method by which oxide thin films of high quality can inexpensively be produced with high productivity in the deposition of a silicon oxide thin film or a titanium oxide thin film by plasma generation. <P>SOLUTION: A CVD system is employed in which plasma is generated in a narrow gap between a cylindrical rotary electrode or an endless belt electrode and a counter electrode provided so as to be confronted with part of the above electrode under a pressure close to the atmospheric pressure by glow discharge to decompose a silicon based reaction gas, so that a silicon oxide thin film is deposited on a base material mounted on the counter electrode. As the silicon based reaction gas, a reaction gas at least containing an inert gas, oxygen and silicon based alkoxide is used, and the partial pressure ratio of the silicon based alkoxide in the reaction gas is controlled to 0.1 to 3.0%. <P>COPYRIGHT: (C)2004,JPO |
