| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of attaining a good FFP close to a Gaussian distribution, without causing a ripple in a high output operation. SOLUTION: The semiconductor laser device is equipped with a first conduction type semiconductor layer, an active layer. and a laminated layer structure in which the first conduction type semiconductor layer and a second conduction type semiconductor layer different from the first conduction type one are laminated in order. The laminated layer structure includes resonator planes for laser resonance in a region of waveguide path where light is guided in the one direction and on both of the ends. The laminated layer structure has a non-resonator plane formed so as to include a section of an active layer on its one end side besides the resonator plane, and the section of the active layer of the non-resonator plane is covered with a light blocking layer. COPYRIGHT: (C)2004,JPO
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