| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a split gate type flash memory element. SOLUTION: Trench element separation membranes are formed on a semiconductor substrate, and a plurality of parallel first active regions are formed. Also, there are aligned sidewalls at the sidewalls of the trench element separation membranes on these regions, and gate insulating membrane patterns, conductive membrane patterns and hard mask patterns are formed laminated sequentially. The upper surfaces of the conductive membrane patterns are exposed by removing hard mask patterns at definite intervals along each of the first active regions. Membrane oxide patterns are formed on the exposed conductive membrane patterns, and the hard mask patterns are removed. Stray gate patterns which are ordered at definite intervals on each of the first active regions are formed by etching the conductive membrane patterns by using the membrane oxide patterns as etching masks. Tunnel membranes oxide are formed at the sidewalls of the patterns, and a plurality of control gate electrodes crossing the upper part of the first active regions are formed. The electrodes are positioned at the upper part of the stray gate patterns. COPYRIGHT: (C)2004,JPO
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