| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of removing carbon from a TERA [tunable etch-resistant ARC: adjustable etch-resistant ARC (ARC represents an anti-reflection coating)] layer that is provided on a semiconductor substrate, or stripping the TERA layer. SOLUTION: A TERA layer 26 is exposed to a plasma containing an effective dose of nitrogen, and optionally oxygen or fluorine. Moreover, the method is compatible with a fluorine based etching system. Thus, the method can be executed in the same system as other etching processes. For example, the method can be executed in the same system as that of plasma etching having fluorine of an oxide or nitride as a base. Moreover, this method includes the method of stripping the TERA layer 26 in situ, and etching an oxide layer 24 and etching a nitride layer 22 in the same etching system. In order to avoid that damages are caused to the oxide layer 24 or the nitride layer 22 below the TERA layer 26, and give good selectivity, execution is made with low ion energy. COPYRIGHT: (C)2004,JPO
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