CATALYTIC CHEMICAL VAPOR DEPOSITION METHOD AND CATALYTIC CHEMICAL VAPOR DEPOSITION DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a catalytic chemical vapor deposition method and a catalytic chemical vapor deposition device in which the control of a substrate temperature can easily be performed without the limitation of substrate materials, the efficiency of energy is high while increasing a thin film deposition rate, and the stabilization of film performance is possible. SOLUTION: In the catalytic chemical vapor deposition method where a deposition precursor formed by decomposing at least a part of a gaseous starting material with a heated catalyst body consisting of a metal or an intermetallic compound is deposited on a substrate to form a thin film, as the catalyst body, the one whose surface has been subjected to ruggedness formation treatment is used. COPYRIGHT: (C)2004,JPO