| 摘要 |
A wiring substrate of the present invention includes a short ring (SR) formed along a periphery of the substrate, an independent line pattern (e.g., a gate terminal) that is coplanar with and independent of SR, a continuous line pattern (e.g., a storage capacitor stem) that is located closest to the independent line pattern and is coplanar and continuous with SR, and an insulating film covering the independent line pattern and the continuous line pattern. The insulating film includes a first through hole reaching the independent line pattern and a second through hole reaching the continuous line pattern.
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