| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film magnetic memory device wherein data readout is speeded up by suppressing the channel resistance of a group of transistors connected to the read current channel. SOLUTION: An ATR (access transistor), located in an MTJ (magnetic tunnel junction) memory cell which is one of the groups of transistors connected to the readout current channel, is a surface-channel field-effect transistor. A surface-channel field-effect transistor presents a lower channel resistance than a buried-channel field-effect transistor, which reduces the RC load imposed on the readout current channel and thereby enables a speedy data readout. COPYRIGHT: (C)2004,JPO |
