| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device whose correct position shift quantity can be obtained by measuring the position shift in the presence of a PVD film on an outer box mark. SOLUTION: The method comprises a process (S103) of forming a lower-layer pattern including a 1st superposition measuring mark by a groove, a process (105) of entirely forming an upper-layer film which has a recessed part on the groove and covers the groove, and a process (S108) of forming a resist pattern including a 2nd superposition measuring mark on the upper-layer material film to form an upper-layer pattern and also has a process (S107) of previously finding the shift quantity of the plane shape of the recessed part from the plane shape of the groove. While the upper-layer material film covers the groove, the position shift of the 2nd superposition measuring mark from the recessed part is measured and the measured value is corrected by using the shift quantity as a shift correction value to detect the 2nd superposition measuring mark shifting in position from the 1st superposition measuring mark (S109). COPYRIGHT: (C)2004,JPO
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