发明名称 THIN FILM MAGNETIC SUBSTANCE STORAGE DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide constitution of a thin film magnetic substance storage device which can store program information efficiently and stably. <P>SOLUTION: Each of program cells and memory cells comprises the same magnetic storage part, the program cell comprises a state change part. Therefore, the program cell has constitution in which the state change part is added to the structure similar to the memory cell. That is, same design as the memory cell can be applied for the magnetic storage part or the like, and the efficient program cell can be arranged. Also the state change part is changed to a fixed state based on electrical change. Therefore, the state change part can store program information stably without allowing program information to be rewritten by magnetic noise or the like. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004110992(A) 申请公布日期 2004.04.08
申请号 JP20020275312 申请日期 2002.09.20
申请人 RENESAS TECHNOLOGY CORP 发明人 OISHI TSUKASA
分类号 G11C16/06;G11C11/15;G11C29/04;G11C29/12;(IPC1-7):G11C29/00 主分类号 G11C16/06
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