| 摘要 |
A flip chip interconnect structure is formed on a bump pad of a chip, and includes an under bump metallurgy (UBM) formed on the bump pad, and a solder bump formed on the UBM. The solder bump includes tin and is further doped with metallic particles that are capable of reacting with tin in the solder bump to from an inter-metallic compound due to a thermal effect produced in use of a later fabrication process or an operation on the chip. Furthermore, the material of the metal particles is selected from a group consisting of copper, silver and nickel.
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