发明名称 Nonvolatile memory card
摘要 The present invention provides a memory card in which stored information is not lost undesirably even when an operation power source is shut down during an erasing/writing process. A nonvolatile memory has an erase table in which a free-space information flag is associated with each physical address of a memory area and an address translation table in which a physical address of a memory area is associated with each logical address. The free-space information flag indicates whether a corresponding memory area is permitted to be erased or not. A control circuit determines a memory area to which rewrite data is to be written by referring to the free-space information flag of the erase table, reflects the physical address and the logical address of the memory area to which the data is written into the address translation table, and updates the free-space information flag of the erase table. The memory area to which rewrite data is to be written is determined by referring to the free-space information flag of the erase table, and rewriting is not performed in the same memory area.
申请公布号 US2004065744(A1) 申请公布日期 2004.04.08
申请号 US20030667663 申请日期 2003.09.23
申请人 RENESAS TECHNOLOGY CORP.;HITACHI ULSI SYSTEMS CO., LTD. 发明人 SHIRAISHI ATSUSHI;TAMURA TAKAYUKI;KUMAHARA CHIAKI;ASARI SHINSUKE
分类号 G06F12/16;G06F3/06;G06F3/08;G06F12/00;G06F12/02;G06K19/06;(IPC1-7):G06K19/06 主分类号 G06F12/16
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