发明名称 Lower electrode contact structure and method of forming the same
摘要 Lower electrode contact structures and methods of forming the same provide an interface having a large surface area between a lower electrode and the underlying layers. The lower electrode is in contact with a contact plug and an insulation layer in which the contact plug is buried. At least one supporting layer protrudes upright along the outer peripheral edge of the top surface of the contact plug. The interface between the lower electrode and the underlying layers is thus increased by the supporting layer(s) so that the lower electrode and the underlying layers will solidly adhere to each other.
申请公布号 US2004065959(A1) 申请公布日期 2004.04.08
申请号 US20030634898 申请日期 2003.08.06
申请人 PARK JEONG-JU 发明人 PARK JEONG-JU
分类号 H01L27/04;H01L21/02;H01L21/768;(IPC1-7):H01L23/48 主分类号 H01L27/04
代理机构 代理人
主权项
地址