| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which has an insulated-gate FET having a feature in gate electrodes in particular. SOLUTION: The manufacturing method of the semiconductor device 1000 forms an insulator 20 on a semiconductor layer 16, and forms a metallic layer 30a on the insulator 20. The method performs ion injection of a metal 32 different from the metallic layer 30a in the desired area of the metallic layer 30a. The method patterns the metallic layer 30a to form the gate electrodes 30A and 30B. COPYRIGHT: (C)2004,JPO
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