PROCESS FOR PRODUCING GaAs SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a process for producing a GaAs single crystal with a reduced number of surface defects. SOLUTION: In the process for producing the GaAs single crystal, the GaAs single crystal is cooled by employing a higher cooling rate for at least a part of a temperature range of 450-600°C than that employed at above 600°C. This shortens residence time of the GaAs single crystal at a temperature range of 450-600°C and therefore reduces the number of the surface defects observed when cutting the GaAs single crystal produced through the process and polishing the cut surface. COPYRIGHT: (C)2004,JPO