| 摘要 |
In a solid-state image-sensing device, an electric signal output from a photoelectric conversion circuit 100 is accumulated in a capacitor C1, and then a MOS transistor T5 is turned on so that the voltage integrated by the capacitor C1 is sampled in a MOS transistor T10. Thereafter, the electric charge obtained through amplification performed by the MOS transistor T10 flows into a capacitor C2, which performs integration so that a voltage commensurate with the integral of the amount of incident light appears at the capacitor C2.
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