发明名称 |
Anorganischer Füllstoff, Epoxyharzzusammensetzung und Halbleitervorrichtung |
摘要 |
By removing a fraction of fine particles having a particle size of less than 2 mu m from starting inorganic filler particles having a mean particle size of 10-50 mu m and adding thereto particles having a mean particle size of 0.1-2 mu m and a specific surface area of 3-10 m<2>/g (BET), there is obtained a particulate inorganic filler having a mean particle size of 5-40 mu m. When a large amount of the inorganic filler is loaded in an epoxy resin composition, the composition maintains a low melt viscosity enough to mold and is effective for encapsulating a semiconductor device without causing die pad deformation and wire deformation. The encapsulated semiconductor device is highly reliable. |
申请公布号 |
DE69727869(D1) |
申请公布日期 |
2004.04.08 |
申请号 |
DE1997627869 |
申请日期 |
1997.08.25 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;MITSUBISHI DENKI K.K., TOKIO/TOKYO |
发明人 |
HIGUCHI, NORIAKI;FUKUMOTO, TAKAAKI;SHIOBARA, TOSHIO;ASANO, EIICHI;TOMIYOSHI, K. |
分类号 |
C08K3/00;C08K7/16;C08K7/18;C08L63/00;C09C1/30;C09C3/04;H01L23/29;H01L23/31;(IPC1-7):C01B33/20 |
主分类号 |
C08K3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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