发明名称 METHOD FOR COATING REACTION CHAMBER IN CVD APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a coating method for use in TFT production of a liquid display device which solves the problem that sidewalls of a reaction chamber in a plasma CVD apparatus are not sufficiently coated after an inside of the reaction chamber is cleaned by plasma discharge, and performs the coating efficiently over a wide area in the reaction chamber. SOLUTION: When a thin film is deposited on a substrate using plasma discharge in a reaction chamber of plasma CVD apparatus, coating after a cleaning of the reaction chamber for removing the adhered thin film in the reaction chamber by plasma discharge of an etching gas is performed in a plurality of stages having different gas pressure or electrode spacing. Difference in the gas pressure among the plurality of stages is made to be not less than 0.1Torr and not more than 4Torr, or difference in the electrode spacing for the plasma discharge among the plurality of stages is made to be not less than 3mm and not more than 40mm. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004111983(A) 申请公布日期 2004.04.08
申请号 JP20030365989 申请日期 2003.10.27
申请人 TOSHIBA CORP 发明人 FUKUDA KAICHI
分类号 C23C16/44;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/44
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