| 摘要 |
PROBLEM TO BE SOLVED: To provide a shorter manufacturing time by shortening the time to form an opening above a fuse section without lowering reliability due to a fuse disconnection or lowering a manufacturing yield of a semiconductor integrated circuit device that is multilayer-interconnected in response to smaller and higher integration. SOLUTION: The semiconductor integrated circuit device forms a fuse section 13 and a pad electrode 17 on an uppermost metal wiring layer on an interlayer dielectric film 12, forms an inorganic insulating protective film 14 on it, then, forms an opening 18 on the upper part of the pad electrode 17, applies a photosensitive organic insulating protective film 15 all over it, patterns it, forms an opening 16 on the upper part of the fuse section 13 and an opening 19 on the upper part of the pad electrode 17, and etches the inorganic insulating protective film 14 as required, thus thinning the film thickness of the inorganic insulating protective film 14 on the upper part of the fuse section 13. COPYRIGHT: (C)2004,JPO
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