发明名称 |
Method of forming fine patterns |
摘要 |
It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, removing the unwanted over-coating agent that has been deposited on the edge portions and/or the back side of the substrate, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, with an additional capability of preventing the occurrence of particles which are a potential cause of device contamination.
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申请公布号 |
US2004067452(A1) |
申请公布日期 |
2004.04.08 |
申请号 |
US20030602883 |
申请日期 |
2003.06.25 |
申请人 |
SUGETA YOSHIKI;KANEKO FUMITAKE;TACHIKAWA TOSHIKAZU |
发明人 |
SUGETA YOSHIKI;KANEKO FUMITAKE;TACHIKAWA TOSHIKAZU |
分类号 |
G03F7/00;G03F7/40;H01L21/027;(IPC1-7):G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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