发明名称 |
SOI FIELD EFFECT TRANSISTOR ELEMENT HAVING A RECOMBINATION REGION AND METHOD OF FORMING SAME |
摘要 |
An SOI transistor element and a method of fabricating the same is disclosed, wherein a high concentration of stationary point defects is created by including a region within the active transistor area that has a slight lattice mismatch. In one particular embodiment, a silicon germanium layer 320 is provided in the active area having a high concentration of point defects due to relaxing the strain of the silicon germanium layer upon heat treating the transistor element. Due to the point defects, the recombination rate is significantly increased, thereby reducing the number of charged carriers stored in the active area. |
申请公布号 |
WO2004004015(A3) |
申请公布日期 |
2004.04.08 |
申请号 |
WO2003US20791 |
申请日期 |
2003.06.24 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WIECZOREK, KARSTEN;HORSTMANN, MANFRED;KRUEGER, CHRISTIAN |
分类号 |
H01L21/336;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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