PHOTORESIST REMOVER COMPOSITION

摘要

The present invention relates to a photoresist remover composition, more particularly to a photoresist remover composition comprising (a) 20 to 60 wt % of a water-soluble organic solvent, (b) 10 to 45 wt % of water, (c) 5 to 15 wt % of an alkyl amine or an alcohol amine, (d) 0.1 to 10 wt % of acetic acid, (e) 0.01 to 5 wt % of an oxime compound, (f) 1 to 10 wt % of an organic phenol compound containing two or three hydroxyl groups, and (g) 0.5 to 5 wt % of a triazole compound. The photoresist remover composition of the present invention can easily and quickly remove a resist film hardened during the hard baking, dry etching, ashing, or iron implantation processes, and a resist film transformed by metallic byproducts etched from the bottom metal film during the process in a short time, and can minimize corrosion of the bottom metal wire during the resist removal process, so that it is very effective for a manufacturing process of semiconductor devices, such as integrated circuits, large-scale integrated circuits, and very large-scale integrated circuits.