| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having a low leakage current and a high electrostatic withstand voltage. <P>SOLUTION: The nitride semiconductor element having an active layer made of a nitride semiconductor between a p-side layer and an n-side layer, both being made of two or more nitride semiconductor layers, respectively, wherein the p-side layer includes a p-type contact layer as a layer for forming an ohmic electrode and the p-type contact layer is made up of the p-type nitride semiconductor layers and the n-type nitride semiconductor layers stacked alternately. <P>COPYRIGHT: (C)2004,JPO |
