| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming stable contact holes regardless of the coarseness or the denseness of a gate electrode. SOLUTION: The method for forming contact holes regardless of the coarseness and denseness of the gate electrode forming region comprises the steps of: depositing a BPSG film 4 on a semiconductor wafer on which transistors are formed; leveling the BPSG film; depositing an insulation film 5 on the BPSG film; and forming contact holes 8 extending to the semiconuctor wafer on the BPSG film and the insulation film. The resulting uniform thickness of the BPSG film from the wafer, regardless of the coarseness and denseness refraction of the gate electrode forming region, makes an etching rate between contact holes uniform to be able to form the contact holes having a small variation in the leakage current value. COPYRIGHT: (C)2004,JPO
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