发明名称 MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a magnetic memory device capable of efficiently using a much stronger magnetic field, and executing stable writing and a magnetic resistance effect element mounted on the magnetic memory device, and to provide a method for easily manufacturing the magnetic memory device. SOLUTION: This magnetic memory device is provided with a laminate constituted of a magnetosensitive layer whose magnetizing direction is changed due to an external magnetic field, so that currents can run to a direction vertical to the laminated surface and a circular magnetic layer arranged on one surface side of the laminate with its direction along the laminated surface as an axial direction, and constituted so as to be put through by a plurality of wires. Thus, a closed magnetic path can be formed by making currents run through the plurality of wires, and the inversion of magnetization in the magnetosensitive layer can be much more efficiently executed. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004111887(A) 申请公布日期 2004.04.08
申请号 JP20020307686 申请日期 2002.09.13
申请人 TDK CORP 发明人 EZAKI KIICHIROU;KOGA KEIJI;KAKINUMA YUJI
分类号 G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):H01L43/08 主分类号 G11C11/15
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