| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element that has stable optical output and an appropriate self-excitation oscillation characteristic. SOLUTION: The nitride semiconductor light emitting element is provided with a substrate on which a lower clad layer made of nitride semiconductor containing Al and Ga and an active layer including a nitride semiconductor containing In and Ga are formed in this order. A lower guide layer made of nitride semiconductor containing In and Ga is provided between the lower clad layer and the active layer, and it is provided with a first layer and a second layer in the order from the side of the active layer. The second layer functions as a supersaturation absorbing layer, and the content of In in the second layer is larger than that in the first layer. COPYRIGHT: (C)2004,JPO
|
