| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device by which the laser light can be stabilized and the increase in the threshold current and the operating current can be suppressed. SOLUTION: The nitride semiconductor laser device is provided with an n-type GaN substrate 1 doped with oxygen, an undoped n-type cladding layer 3 which is formed on the n-type GaN substrate 1, an MQW active layer 41 made of nitride semiconductor which is formed on the undoped n-type cladding layer 3, a p-type cladding layer 5 which is formed on the MQW active layer 41, a light guide layer 42 on the p side which is formed between the p-type cladding layer 5 and the MQW active layer 41 and has a thickness of about 0.1μm, and a light guide layer 44 on the n side which is formed between the undoped n-type cladding layer 3 and the MQW active layer 41 and has a thickness of about 0.05μm being smaller than that of the light guide layer 42 on the p side. COPYRIGHT: (C)2004,JPO
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